| 摘要 |
<p>METHOD OF FORMING A PATTERN OF METAL ELEMENTS A method of forming a pattern of metal elements arranged with very small gaps therebetween on a substrate in magnetic bubble memory devices, semiconductor devices, and the like. In this method, first, a pattern forming layer having metal portions adapted for forming pattern elements and insulating portions for providing the gaps is formed on the substrate, and thereafter the pattern forming layer is processed by using a photolithographic technique to form the pattern. By using this method, it is possible to form a permalloy propagation pattern with gaps of a size smaller than 1 .mu.m in a magnetic bubble memory device, for example, by using conventional photolithographic techniques.</p> |
