| 摘要 |
PCT No. PCT/DE79/00145 Sec. 371 Date Aug. 14, 1980 Sec. 102(e) Date Aug. 14, 1980 PCT Filed Dec. 11, 1979 PCT Pub. No. WO80/01334 PCT Pub. Date Jun. 26, 1980.A method for producing a semiconductor arrangement of two antiparallel connected diodes comprising a semiconductor body which includes a base region of one conductivity type and a zone adjacent each side of the base region. Each zone forms a pn-junction with the base region and thus a diode structure and is offset with respect to the other zone. The major surfaces formed by each base region and one of the two zones are provided with a contact metal coating so as to electrically connect the two diode structures. In accordance with this method, a layer sequence of three zones with pn-junctions therebetween is formed by diffusion on a semiconductor starting disc. Then, mutually parallel recesses are produced with the aid of masking in each major surface of the disc according to a strip-shaped structure, offset with respect to that of the other major surface, by removing material to beyond the respective pn-junction. Both major surfaces are metallized and the disc is divided along the recesses into semiconductor arrangements.
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