| 摘要 |
PURPOSE:To enable to enhance the plasma treating capacity and to easily perform the handling of the plasma treating device by a method wherein substrates to be treated housed in the treating chamber are disposed opposite to each other in a non-contact state on the outsides of opposed pair of electrodes for plasma generation and the surfaces of the substrates to be treated are treated with a portion of plasma made to generate around the pair of electrodes and radical molecules in the plasma. CONSTITUTION:A plural number of pair of apposed electrodes 52 form plasma generation are arranged in parallel to each other at prescribed intervals in a treating chamber 50 and substrates 51 to be treated are inserted in gaps 53 between them in a non-contact state. The pair of electrodes 52 for plasma generation is one that two sheets of metal-made electrode plates 55, each having numerous penetrated holes 54, for example, have been combined oppsote to each other and the electrodes 52 are respectively connected to a power source 56. Reaction gas in introduced in the treating chamber 50, and at the same time, when the output of the power source 56 is given to the pair of apposed electrode 52 for plasma generation, plasma 57 of the reaction gas is generated in between the metal-made electrode plates 55. A portion of this plasma 57 and radical molecules in the plasma 57 spread to the sides of the substrates 51 to be treated through the penetrated holes 54 and a surface treatment by a CVD method, an etching, etc., is performed on the surfaces of the substrates 51. |
