| 摘要 |
PURPOSE:To enable to widen the uniform film thickness region of a resist by a method wherein a set revolution number and a prescribed revolution time correspnding to the desired film thickness of the resist and a product of both are selected and after the film thickness was equalized by making the substrate revolve, the substrate is made to again revolved in a revolution number less than the above-mentioned set revolution number and the resist is dried. CONSTITUTION:A resist 3 is dripped on the surface of the thin film of a substrate 1, a set revolution number and a prescribed revolution time corresponding to the desired film thickness of a resist 6 and a product of the set revolution number and the prescribed revolution time are selected, and the film thicknss of the resist 6 is substantially equalized by making the substrate 1 revolve. After that, the substrate 1 is made to again revolve in a revolution number less than the above-mentioned set revolution number and the resist 6 equalized is made to dry. In the equalizing process, the following way is exemplified as an example. The prescribed revolution number R of the substrate 1 is selected at a prescribed value within an extent of 100-6,000rpm in consideration of the film thickness and viscosity of the resist 6 and the revolution time T is shortened to 20sec or less from a point after the set revolution number R reached the prescribed value, and also, the product of the revolution number R and the revolution time T is set at 24,000rpm/sec or less.
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