发明名称 MANUFACTURE OF SEMICONDUCTOR DEVICE
摘要 PURPOSE:To enable to form a marking groove with a step difference required for alignment without augmenting the layer resistance in a high concentration diffusion region by a method wherein a pattern in a marking region is formed by means of exclusive photoetching process independent of the photoetching process to form a pattern in the high concentration diffusion region. CONSTITUTION:A silicon substrate 1 is etched by means of conventional photoetching process utilizing photoresist material 2 as a mask to form a mark ing groove 3 into the P-type silicon substrate 1. Next a thermal oxide film 4 at 7,000 Kt is formed on the silicon substrate 1 and then a window is opened i a region to form a buried layer therein for N-type high concentration diffusion. Finally the oxide film 4 is removed to form an epitaxial layer layer without performing any unnecessary oxidation in the diffused region 5.
申请公布号 JPS61196533(A) 申请公布日期 1986.08.30
申请号 JP19850036880 申请日期 1985.02.26
申请人 NEC CORP 发明人 KAMIYA TAKAYUKI
分类号 H01L21/68;H01L21/027;H01L21/30;H01L21/67 主分类号 H01L21/68
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