发明名称 SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE
摘要 PURPOSE:To prevent the malfunction of a logical circuit due to a negative undershoot of an input signal by setting the threshold voltage of a clamping MISFET smaller than the threshold voltages of the MISFETs of the logical circuit constitution of an input circuit. CONSTITUTION:The absolute value of the threshold voltage of the clamping MISFETQ4 is set smaller than those of MISFETs Q1-Q3 constituting the logical circuit. Prevention against a gate breakdown due to a positive high voltage is attained by clamping the voltage to a specific level by the surface breakdown of an FETQ4 and the breakdown of an p-n junction diode D between a drain and a substrate. The threshold voltage of the FETQ4 is small, so it is not clamped for a negative undershoot of the input signal and a transmission gate FETQ1 does not turns on, thereby preventing information stored in the gate of an input FETQ3 from being destroyed.
申请公布号 JPS60121820(A) 申请公布日期 1985.06.29
申请号 JP19840176653 申请日期 1984.08.27
申请人 HITACHI SEISAKUSHO KK 发明人 YASUNARI KENJIROU
分类号 H01L21/8234;H01L27/088;H03F1/52;H03K19/003;H03K19/0944 主分类号 H01L21/8234
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