摘要 |
PURPOSE:To drive high energy ions without increasing the size of the captioned device while reducing the load on an operating power source by using a high- frequency quadruplex accelerator as an acceleration tube for the latter step acceleration of an ion implantation device. CONSTITUTION:An ion implantation device is formed of an ion source 1, a mass separator 2, a high-frequency quadruplex accelerator 10 and a driving chamber 5 with a sample 6 enclosed therein, while the high-frequency quadruplex accelerator 10 is formed of four electrodes having the periodically corrugated shape so that the two remaining electrodes may be concave at the part where the two opposing electrodes are convex. Further, the former step of the quadruplex accelerator 10 is provided with a two-step magnetic quadruplex lens 12 for converting a beam section in order to enable a driving current to be increased. Accordingly, the high-frequency quadruplex accelerator 10 makes it possible to accelerate with extremely good efficiency, thus making it possible to simply realize driving an mA class beam of 100KeV- several MeV with a light load on power source. |