发明名称 JOINING METHOD OF SILICON CRYSTAL
摘要 PURPOSE:To join silicon crystals mutually and firmly without using adhesives by fast sticking the two silicon crystals washed by water and dried after mirror polishing in a clean room and thermally treating the crystals at a fixed temperature. CONSTITUTION:Several joining surface of two silicon crystals is each mirror- polished to surface roughness of a value such as 500Angstrom or less, the polished surfaces are washed by water and dried, and these surfaces are fast stuck mutually under conditions, in which foreign matters do not adhere on both surfaces of said each polished joining surface substantially, in a clean room having the quantity of floating of dust of approximately 20 pieces/m<2> or less and heated at a temperature of approximately 200 deg.C or higher. Accordingly, the two silicon crystals can be joined together firmly.
申请公布号 JPS60121777(A) 申请公布日期 1985.06.29
申请号 JP19830229169 申请日期 1983.12.06
申请人 TOSHIBA KK 发明人 SHINPO MASARU;FUKUDA KIYOSHI
分类号 H01L21/02;H01L27/12;H01L29/84;(IPC1-7):H01L29/84 主分类号 H01L21/02
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