| 摘要 |
PURPOSE:To stabilize the characteristics of a silicon gate MOS, and to improve reliability thereof by making boron or gallium to be contained in a channel region and a gate oxide film and making phosphorus to be contained in the gate oxide film. CONSTITUTION:When manufacturing a silicon gate MOS, phosphorus is added into polycrystalline silicon during growth or immediately after growth through doping or a diffusion technique before diffusing boron to polycrystalline silicon. Boron is diffused, a silicon oxide film is formed in compact structure by phosphorus, and an intrusion of boron to the oxide film after the diffusion of boron is inhibited. Boron or gallium is made previously to be contained in a channel region and a gate oxide film, and phosphorus is made to be contained in the gate oxide film, thus stabilizing the characteristics of the silicon gate MOS. |
