| 摘要 |
PURPOSE:To attain high frequency and low noises excellently by forming a striped metallic electrode, which is insulated electrically from an emitter layer by a dielectric thin-film and has an ohmic junction to a base layer, in structure, in which the metallic electrode is buried in a semiconductor crystal, and minimizing the base resistance of the metallic electrode. CONSTITUTION:Striped metallic electrodes 10 are brought into ohmic-contacted with a base layer 3, and tungsten, etc. are used as a metallic material for the metallic electrodes 10. Dielectric thin-films 11 consisting of SiO2 electrically insulating an emitter layer 2 and the striped metallic electrodes 10 are formed. The thickness of the electrode 10 is formed in size such as 1mum or less and a distance between base electrodes is brought to 2mum or less, and the thickness of the striped metallic electrodes 10 is formed in approximately 300Angstrom and the thickness of the dielectric 11 thin-film is shaped in 300Angstrom , and the crystallizability of the emitter layer 2 is not disturbed extremely by the metallic electrodes 10. Accordingly, the base resistance of the hetero-junction bipolar transistor can be reduced extremely by the metallic electrodes 10 having low resistance. |
