| 摘要 |
PURPOSE:To reduce the resistance of source and drain electrodes for an FET using a hetero-junction, and to obtain the characteristics of large mutual conductance by approximately conforming the direction of currents of an electronic channel in the <011> direction of first and second semiconductor crystals. CONSTITUTION:Each of a first semiconductor layer 12 and a second semiconductor layer 13 is grown on the surface of a high-resistance substrate 11 for a semiconductor device, thus forming a wafer 21. A source electrode 15, a drain electrode 16 and an electronic channel 17 by a gate electrode are shaped on a crystal <100> plane in the wafer 21, and drain currents are flowed in the crystal <011> direction. The gate electrode is constituted by Al, and Au-Ge is evaporated on the source and drain electrodes 15, 16 and Ni on the Au-Ge and Au-Ge and Ni are alloyed with a semiconductor crystal through heat treatment, and the electrodes 15, 16 are formed by alloy layers so as to reach to the layer 12. The resistance of the source and drain electrodes 15, 16 having a hetero-junction is reduced, and the characteristics of large mutual conductance are obtained. |
