| 摘要 |
PURPOSE:To store minority carriers generated by incident beams effectively, and to contribute the carriers to an amplification factor by forming the titled detecting element by a semiconductor layer receiving beams and two semiconductor regions formed within a range of the diffusion length of minority carriers. CONSTITUTION:A semiconductor detecting element is formed by a semiconductor layer 2 receiving beams and semiconductor region 3 and region 4 shaped within a range of the diffusion length of minority carriers for collecting minority carriers to be generated. The region 3 and the region 4 store minority carriers being generated and also control potential, but they also function as light-receiving regions. Consequently, an effective light-receiving area is quite the same as conventional elements. Accordingly, minority carriers generated by incident beams are stored effectively, and the carriers can contribute to an amplification factor. |
