| 摘要 |
PURPOSE:To prevent the contact surfaces of a semiconductor device from being subjected to damage and from being adhered by a method wherein an etching is performed on the surface of the oxide film to an arbitrary film thickness of the oxide film by a wet etching method, and after that, the resists are made to tightly adhere on the surface of the oxide film by applying heat. CONSTITUTION:A wet etching is performed on an oxide film 2 on a silicon substrate 3 using photo resists 1 as masks to leave about one-second of the film thickness of the oxide film 2 as shown by a diagram (a), a wet etching is performed, and the resists 1 are made to tightly adhere on the etched surface of the oxide film 2 by performing a baking for about one hour at about 180 deg.C as shown by a diagram (b). Then, when a wet etching is performed again, the contact in such a configuration as one shown by a diagram (c) can be obtained. |
