| 摘要 |
PURPOSE:To completely ohmically connect a voltage supply metal electrode and a semiconductor substrate without adding a special photoetching step by emitting a laser to a diffused layer formd on the surface of the substrate. CONSTITUTION:A reverse conductive type impurity region 4 to a semiconductor substrate 3 is formed on the substrate 3, and a metal electrode 1 for supplying a voltage to the region 4 is connected with the region 4. A laser 6 is emitted to the exposed diffused layer 4 to form an amorphous silicon layer 5 across the layer 4 and the substrate 3. According to this method, the diffused layer and the substrate can be reliably ohmically connected merely by emitting the laser, the addition of the photoetching step can be eliminated, and the stable operation of a semiconductor device can be guaranteed. |
