| 摘要 |
PURPOSE:To remove the residuals in a level-difference part with good controlability without increasing the number of process by performing the etching only with a raw gas with stopping a high-frequency electric power once at dry etching. CONSTITUTION:As an Al oxide 3 exists on a surface of Al, electric power is applied at a primary stage of etching at first and gas 5 is made into plasma for performing etching. Next, after the Al oxide 3 is eliminated, the electric power is continuously applied to make the gas 5 into plasma and the Al is subjected to anisotropic etching. At the last stage of etching, the electric power is stopped after over etching to a certain extent after the time when a base is exposed over the whole wafer as a just etch and etching of residuals 1 using a raw gas while flowing the gas 5 for a constant time, after which resist 4 is removed. |
