| 摘要 |
PURPOSE:To obtain a semiconductor device having high reliability by providing an insulating film which is coated on the exposed surface of a bonding pad, thereby preventing the pad from corroding. CONSTITUTION:Alcohol solution which contains silicon oxide is coated to cover at least the exposed portion 6 of a bonding pad 3a and the bonded portion 7 of fine metal wirings 5 of a semiconductor device 10 in which the wirings 5 are bonded to the pad 3a. The device 10 on which the solution is coated is baked at the prescribed temperature in nitrogen atmosphere for the prescribed time to form an SiO2 film 8 on the bonded portion 7 of the wirings 6 with the exposed portion 6. Thus, the pad 3a is protected against moisture and other impurity ions by coating the film 8 on the exposed portion 7 of the pad 3a. |
