| 摘要 |
PURPOSE:To develop a capacitor having a large electrostatic capacity by utilizing SrTiO3 having a high dielectric constant as the dielectric of the capacitor in a compound integrated circuit. CONSTITUTION:An Au layer 2 is formed on a substrate 1 made of ceramic or glass by a vapor deposition method, etc., and the Au layer is masked with a photoresist and partially etched. The surface is covered with a Ti metal 3 by vapor deposition, spattering, etc., and the Ti metal is masked again with the photoresist and etched to form a Ti layer 3 on the Au layer 2. Then the Ti layer is chemically treated with an aq. alkaline soln. contg. >=0.1mol/l Sr<2+> whose pH is regulated to >=13 to convert the Ti layer 3 into an SrTiO3 layer. An Au electrode 5 to be used as an opposite electrode is formed thereon to form a capacitor having a large electrostatic capacity wherein an SrTiO3 layer 4 having a high dielectric constant is used as the dielectric. |
