| 摘要 |
PURPOSE:To provide a semiconductor integrated circuit device which has high reliability and high yield by employing a silicon wafer having ultrafine defects on the surface and in the vicinity of the surface and specific value of internal defect density including reintrinsic gettering effect for preventing the production of an oxygen doner. CONSTITUTION:When a silicon wafer having 10<5>cm<-2> or higher of internal defect density is used, the internal defect density shown by numeral 2 is high, ultrafine defects on the surface and in the vicinity of the surface shown by numeral 3 are less, and the production of oxygen doner shown by numeral extremely decreases. Further, if the internal defect density becomes 10<6>cm<-2> or higher, the ultrafine defects on the surface and in the vicinity of the surface of numeral 3 extremely decrease, and the oxygen doner of numeral 4 is hardly generated. A semiconductor integrated circuit device using the silicon wafer prevents dislocation of the surface and in the vicinity of the surface and lattice defect such as defects in the laminated layer and further prevents the production of the oxygen doner for causing the improper input leakage, the deterioration and decrease of the operating margin, and accordingly provides high reliability and high yield. |
