| 摘要 |
PURPOSE:To improve the accuracy in pattern processing by uniforming a reactive gas supplied to a semiconductor substrate and restraining variability of etching speed by providing the composition in which a gas introducing pipe has the same or larger size than a semiconductor substrate and plural gas blow-off outlets are arranged in parallel to the semiconductor substrate. CONSTITUTION:An etching table 6 is arranged in the center of a tube reactor 3 and a semiconductor substrate 5 after a photoresist process is put on the table 5. Various kinds of etching gases are introduced from a gas introducing pipe 1 and a pattern is selectively etched by plasma etching. The electrode 4 which is arranged in parallel to the semiconductor substrate 5 put on the etching table 6 in the tube reactor 3 is connected to the gas introducing pipe 1 and it has the structure that plural gas blow-off outlets are opened. By this constitution, the reactive gas is supplied uniformly to a surface of the substrate 5 from the plural gas blow-off outlets provided for the electrode 4 arranged in parallel to the semiconductor substrate 5 so that uniforming of the concentration of the reactive gas applied to the surface can be contrived and scattering of the accuracy in etching processing due to irregularity of concentration on the surface of the semiconductor substrate 5. |
