THIN FILM FORMING DEVICE

摘要

PURPOSE:To enable discrete control of the speed and quantity of cluster ions to a substrate with a cluster ion beam device by providing the 2nd electrode between an electrode for accelerating the cluster ions to the substrate for vapor deposition and the substrate. CONSTITUTION:A metallic vapor for vapor deposition in a cluster ion beam device is generated by heating and evaporating a raw material 3 for vapor deposition in a hermetic crucible 4 by a filament 5 for heating and is ejected from the upper nozzle 6 of the crucible 4 thereby forming clusters. The raw material for vapor deposition made into the clusters passes through the inside of an ionizing filament 8 and a lead-out electrode 9 for the electron released from the filament 8 and is ionized by the collision of the electron against said material. The ionized clusters are accelerated by an accelerating electrode 10 and collide against a substrate 11 by which the raw material for vapor deposition is deposited thereon by evaporation at the controlled quantity. An electrode 12 of the same voltage as the voltage of the substrate is provided on the front face of the substrate 11 to control the speed at which the ionized clusters collide against the substrate 11.