| 摘要 |
PURPOSE:To perform the microminiaturization and high integration of an element by forming metal silicide layers over a substrate contacting layer, an impurity layer formed in parallel with the layer, or a well-contacting layer and an impurity layer formed adjacent to the contacting layer, and forming a single contacting hole on the metal silicide layer. CONSTITUTION:A substrate contacting layer 37 and an impurity layer 35 or a well contacting layer 42 and an impurity layer 41 are directly electrically connected by silicide layers 49, 50. Thus, in case of supplying a current to the substrate 31 and the layer 35, a sole contact, i.e., aluminum wirings 52 provided on the layer 49 are utilized. The power supply to the P-type well 38 and the layer 41 can be similarly performed by utilizing aluminum wirings 55. Accordingly, it is not necessary to form contacting holes are opened at the layers 37, 35 and 42, 41 by forming aluminum wirings, but one aluminum wirings may be sufficiently provided on parts of the layers 49, 50. |
