| 摘要 |
PURPOSE:To eliminate the necessity of matching margin for leading base and emitter electrodes by using polysilicon electrodes for one leading electrode of two impurity regions in an active region, coating the surface of the polysilicon electrode with an insulating film, opening a hole for other leading electrode, and extending the one leading electrode onto a separating region. CONSTITUTION:To form the second conductive type impurity region 6 on the prescribed region in the first conductive type impurity region 5, a hole 9 of the emitter region 6 is opened at a thin silicon oxide film 71 formed over the inner surface of the base region 5. Then, a polysilicon and nitride silicon are deposited on the overall surface, and the prescribed polysilicon electrode 11 is etched. The side of the electrode 11 is selectively oxidized to form a silicon oxide film 13. Then, a PSG film 15 is deposited on the enitre surface. The second contacting hole 23 of the emitter is formed at the electrode 22 on a separating region 4, and one end of the first containing hole 17 of the base is formed between the hole 9 and the film 13 in a masking step for defining it. |
