| 摘要 |
PURPOSE:To prevent the warpage of a semiconductor layer which occurs when an insulating layer having substantially equal thermal expansion coefficient to the semiconductor layer is formed on the semiconductor layer by forming the insulating layer on the back surface of the semiconductor layer. CONSTITUTION:An SiC layer 11 of insulator having substantially equal thermal expansion coefficient as an Si layer having BeO or BN is formed thickly on the back surface of an n type Si wafer 10. After the layer 11 is bonded on the wafer 10, the wafer 10 is polished or etched from the surface to be reduced in thickness, thereby forming an n type Si layer 10a. Then, after a p<+> type layer 12 and an n<+> type layer 13 are formed by a selective diffusion method or an ion implantation method in the layer 10a, electrodes 14 of aluminum are provided to form a diode. |
