| 摘要 |
PURPOSE:To obtain the film having high insulating property and excellent chemical stability by a method wherein, when an insulative thin film is coated on a semiconductor element, a superconductive element or the IC consisting of these elements, a laminated thin film whereon a thin film consisting of an insulative material and a carbon thin film are laminated is used. CONSTITUTION:A substrate 1, on which an insulative thin film is going to be coated, is retained in a vacuum bell jar, and an SiO2 film 2 of approximately 400mum in thickness is coated on the surface of the substrate 1 by performing a resistance heating vapor-deposition method. Then, a carbon film 3 of approximately 2mum in thickness is laminated and adhered on the whole surface of the film 2 by performing an ion beam sputtering method. Besides, an SiO2 film 4 and a carbon film 5 are laminated and coated on the above-mentioned film 5, an etching is performed as deep as to the film 2, and a prescribed pattern is obtained. Through these procedures, a part of the insulative film is constituted by a chemically stable carbon thin film, and etching resisting characteristics are enhanced without lowering insulating property. |
