| 摘要 |
PURPOSE:To prevent a potential difference causing a gate destruction from being generated between gate electrodes and a semiconductor substrate by a method wherein the gate electrodes are electrically connected to a semiconductor substrate during a wiring process untill floating is released. CONSTITUTION:One end of a wiring 14J is electrically connected to a gate electrode 5A through the intermediary of a wiring 14H, a connecting hole 13 while the other end is also connected to a wall region 2 through the intermediary of a wiring 14A, the hole 13 and a semiconductor 10, likewise one end of a wiring 14K is electrically connected to another electrode 5B through the intermediary of a wiring 14I and the hole 13 while the other end is also connected to the region 2 through the intermediary of the wiring 14A, the hole 13 and the region 10. Through these procedures, the electrodes 5A, 5B to be floating in the wiring process are electrically shortcircuited to the region 2 as well as to the substrate 1 through the intermediary of a wiring 14C. Next as soon as the wiring of the second layer is completed, the wirings 15J, 14K and a part of 14C are removed to electrically cut off the connection between the electrodes 5A, 5B and the region and between the electrodes 5A, 5B and the substrate 1, as well between the substrate 1 and the region 2. |
