| 摘要 |
In a process for producing photo-etching masks, in particular for flexible film circuits with resistor networks, enlarged drawings of the configuration of the resistor film are first made, the enlargement factor being chosen in such a way that, with a constant camera setting, the 1:1 mask for the resistor network is produced in two steps. The drawings obtained in this way are reduced in a first step by photographic techniques and then mounted in an assembly master. The photo-etching mask is then reduced to 1:1 in a second step by photographic techniques with the camera setting unchanged. <IMAGE>
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