| 摘要 |
PURPOSE:To obtain a pattern high in sensitivity and resolution by forming a specified Si-contg. methacrylate copolymer on an org. polymer material formed on a substrate, patternwise exposing said copolymer layer with high energy rays, removing the exposed parts in development, using the remaining parts as a mask, and etching the substrate. CONSTITUTION:A copolymer used as a pattern forming material is represented by formula I in which X is methyl or phenyl; Y is a group represented by one of formulae II-V; n is a positive integer; m is 0 or a positive integer, and preferably, <=1/2 of n. For example, a polymer layer made of polyester, novolak, polyimide, or the like good in plasma resistance, formed on a silicon wafer, is coated with said pattern-forming material, and after prebaking, it is exposed to electron beams, far UV rays, or the like in a desired pattern. Then, the exposed parts are removed by dissolving them with a developing solvent to obtain a fine submicron pattern high in resolution with high sensitivity. This pattern is good in plasma resistance, and accordingly, high density integrated circuits can be obtained with good precision by using it as a mask. |
