| 摘要 |
PURPOSE:To form an oxide film selectively by using a substance, the heat of formation on oxidation thereof takes a negative value and the absolute value of the negative value thereof is smaller than a substrate or takes a positive value, such as Au as a growth preventive film. CONSTITUTION:SiO2 2, an Al wiring layer 3, a diffusion preventive layer 5 in Ti, etc. and a growth preventive layer 6 in Au, etc. are superposed on an Si substrate 1, and patterned. The surface is coated with Au patterns 61, 62, and CVDSiO2 4 is formed. A reaction gas used, such as SiH4, SiH2Cl2, etc. reacts with H2O or O2 adsorbed onto the substrate and SiO2 is formed, but O2 and H2O require critical density. Adsorbed O2 or H2O is brought to critical density or less on a layer in Au, Pt, etc. having the small absolute value of the heat of formation on oxidation. H2O or O2 is adsorbed onto SiO2 or Al with high density, and a reaction is generated and SiO2 is grown. Accordingly, the SiO2 layer 4 does not grow on the Au patterns 61, 62, and selectively grows only on the SiO2 layer 2 in the recessed sections of the substrate, thus flattening the surface, then fining a device. |
