发明名称 |
PHOTOELECTRIC CONVERSION SYSTEM |
摘要 |
The photoelectric converter consists of the first electrode, the amorphous silicon layer (32) containing hydrogen which is set up on the first electrode, and the second electrode composed of the transparent conducting layer (38). The transparent conducting layer is the solid-solution of In2O3 and SnO2 (ITO), and has the thickness of 300-2000A. The composition of the solid solution has more than 80 mol.% of In2O3. The solid solution has lower resistivity, and is more desirable for the transparent elctrode than pure In2O3.
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申请公布号 |
KR850000901(B1) |
申请公布日期 |
1985.06.26 |
申请号 |
KR19810001524 |
申请日期 |
1981.05.02 |
申请人 |
HITACHI, LTD. |
发明人 |
DANAGA, DOSHIHIRO;SHIMOMODO, YASUHARU;SUGADA, DOSHIHISA;SASANO, AGIRA;DANAGA, YASUO |
分类号 |
H01L27/146;H01L31/00;H01L31/10;H04N5/335;H04N5/341;H04N5/369;H04N5/372;H04N5/374;(IPC1-7):H01L31/10 |
主分类号 |
H01L27/146 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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