| 摘要 |
PURPOSE:To reduce crystal grain boundary contained in the interior and improve the quality of the crystal, by preparing a crystal ingot, and heat-treating the ingot in a vapor atmosphere of component elements contained in the crystal ingot. CONSTITUTION:A raw material element is sealed in a quartz ampule under reduced pressure, and the whole is melted in a heating furnace and then passed through a zone having a temperature gradient in the furnace to grow crystals from the tip part and prepare a crystal ingot 13, e.g. cadmium tellurium crystal ingot. The resultant crystal ingot 13 is then contained in a vacuum closed vessel 11 having a temperature gradient, and a component element 15, e.g. cadmium, contained in the crystal ingot 13 is simultaneously contained in the high-temperature side of the closed vessel 11. The crystal ingot 13 is then heat-treated in a vapor atmosphere of the component element 15 to give the aimed semiconductor crystal with little crystal grain boundary contained in the interior thereof. |
