发明名称 POWER FAILURE PROTECTING CIRCUIT OF MEMORY
摘要 PURPOSE:To set a lower output voltage of a battery device by using a transistor (TR) as a charge preventing element for a battery device to decrease the voltage drop between the battery device and a power input terminal of a memory element. CONSTITUTION:A DC power supply device 2 converts a 100V AC voltage supplied from an AC power source 1 into a 5.6V DC voltage and applied the voltage to a positive power input terminal VD of the memory element via a diode 3. If a power failure takes place, the supply of the AC voltage to the DC power source 2 is stopped and an output voltage of the DC power supply device 2 is decreased to 3.5V, then the TR11 is transited to the conductive state. Thus, a 2.9V DC voltage is applied to the input terminal VD of the memory element 4 as a memory holding DC voltage via the TR11 from the battery device 13 after that time. The output voltage of the battery device 13 is set to a value of >=2.8V by using the TR in this way and two dry cells are enough for the purpose.
申请公布号 JPS60118921(A) 申请公布日期 1985.06.26
申请号 JP19830226646 申请日期 1983.11.30
申请人 TOKYO DENKI KK 发明人 MIURA KAZUNORI
分类号 H02J1/00;G06F1/00;G06F1/26 主分类号 H02J1/00
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