| 摘要 |
PURPOSE:To prevent a solid-state image pickup device provided with a signal reading part consisting of the 2nd conductive type area and having density higher than the 2nd conductive type area between a photoelectric conversion element part and a charge transfer device from a residual image phenomenon by contacting the 2nd conductive type area having a high density in said signal reading part with the charge transfer device and separating the area from the photoelectric conversion element. CONSTITUTION:A curve 11' is potential distribution under an electrode 9 at the OFF state of a transfer gate and a curve 12'a is potential distribution under the electrode 9 at the ON state of the transfer gate. If a photodiode is set up so as to be depleted with low potential by reducing the concentration of an impurity in the n type area 1 of the photodiode, the signal charge of the photodiode is completely transferred to a vertical shift register. Since the electrode 9 is formed by polysilicon and an area under a part obtained by oxidizing the polysilicon electrode 9 is p<-> type area 6 even if the side of the polysilicon electrode 9 is oxidized, the electrode 9 is depleted at the ON state of the transfer gate and the potential distribution shown by the curve 12'b is supposed. Consequently, complete charge transfer from the photodiode to the vertical shift register takes place.
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