| 发明名称 |
Planarization of multi-level interconnected metallization system. |
| 摘要 |
<p>The planarization of structures having vertical interconnection studs embedded in an insulator layer utilizing a resist layer with dry etching in a CF<Sub>4</Sub> ambient for equal etching of resist and the insulation to planarize the insulation, followed by dry etching in essentially a noble gas (argon) ambient for equal etching of the insulator layer and stud metal to desired planarization.</p> |
| 申请公布号 |
EP0146038(A2) |
申请公布日期 |
1985.06.26 |
| 申请号 |
EP19840114433 |
申请日期 |
1984.11.30 |
| 申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
BARTUSH, THOMAS ADAM;BROOKS, GARTH ALVIN;KITCHER, JAMES ROBERT |
| 分类号 |
H01L21/3205;H01L21/3105;H01L21/311;H01L21/3213;H01L21/768;(IPC1-7):H01L21/90;H01L23/52 |
主分类号 |
H01L21/3205 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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