发明名称 |
Substrate loading means for a chemical vapor deposition apparatus |
摘要 |
A controlled temperature deposition device comprising an inner reaction chamber having gas distribution means for introducing gas into inner chamber and removing gas therefrom and a vacuum chamber means surrounding the inner deposition chamber and spaced from the walls thereof for maintaining a medium vacuum therein. Associated with the deposition device is a substrate loading and unloading fork which transfers substrates such as wafer boats from outside the device to a position in the inner deposition chamber and removes them from the inner deposition chamber following deposition.
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申请公布号 |
US4524719(A) |
申请公布日期 |
1985.06.25 |
申请号 |
US19830529415 |
申请日期 |
1983.09.06 |
申请人 |
ANICON, INC. |
发明人 |
CAMPBELL, BRYANT A.;DUBOIS, DALE R.;MANRIQUEZ, RALPH F.;MILLER, NICHOLAS E. |
分类号 |
C23C16/48;C23C16/54;(IPC1-7):C23C13/08 |
主分类号 |
C23C16/48 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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