发明名称 Substrate loading means for a chemical vapor deposition apparatus
摘要 A controlled temperature deposition device comprising an inner reaction chamber having gas distribution means for introducing gas into inner chamber and removing gas therefrom and a vacuum chamber means surrounding the inner deposition chamber and spaced from the walls thereof for maintaining a medium vacuum therein. Associated with the deposition device is a substrate loading and unloading fork which transfers substrates such as wafer boats from outside the device to a position in the inner deposition chamber and removes them from the inner deposition chamber following deposition.
申请公布号 US4524719(A) 申请公布日期 1985.06.25
申请号 US19830529415 申请日期 1983.09.06
申请人 ANICON, INC. 发明人 CAMPBELL, BRYANT A.;DUBOIS, DALE R.;MANRIQUEZ, RALPH F.;MILLER, NICHOLAS E.
分类号 C23C16/48;C23C16/54;(IPC1-7):C23C13/08 主分类号 C23C16/48
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