发明名称 Monolithic low noise common-gate amplifier
摘要 A monolithic amplifier having a common-gate input stage with a device transconductance which is higher than required for input match, and a load impedance presented to the common-gate stage which is not conjugate matched. The present invention teaches a common-gate configuration using an FET with higher transconductance and a higher output load impedance. Over narrower bandwidths, excellent input match is thus obtained with noise figures at least as good as those obtained with the common-source approach. This combination of noise figure and input match is achieved in a compact monolithic structure.
申请公布号 US4525678(A) 申请公布日期 1985.06.25
申请号 US19820395399 申请日期 1982.07.06
申请人 TEXAS INSTRUMENTS INCORPORATED 发明人 LEHMANN, RANDALL E.;BREHM, GAILON E.;SEYMOUR, DAVID J.
分类号 H03F3/193;H03F3/60;(IPC1-7):H03F3/60 主分类号 H03F3/193
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