发明名称 |
Monolithic low noise common-gate amplifier |
摘要 |
A monolithic amplifier having a common-gate input stage with a device transconductance which is higher than required for input match, and a load impedance presented to the common-gate stage which is not conjugate matched. The present invention teaches a common-gate configuration using an FET with higher transconductance and a higher output load impedance. Over narrower bandwidths, excellent input match is thus obtained with noise figures at least as good as those obtained with the common-source approach. This combination of noise figure and input match is achieved in a compact monolithic structure.
|
申请公布号 |
US4525678(A) |
申请公布日期 |
1985.06.25 |
申请号 |
US19820395399 |
申请日期 |
1982.07.06 |
申请人 |
TEXAS INSTRUMENTS INCORPORATED |
发明人 |
LEHMANN, RANDALL E.;BREHM, GAILON E.;SEYMOUR, DAVID J. |
分类号 |
H03F3/193;H03F3/60;(IPC1-7):H03F3/60 |
主分类号 |
H03F3/193 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|