| 摘要 |
PURPOSE:To produce an FET of a submicron gate length with ease by a method wherein the surface of a semiconductor substrate is coated with an insulating film, openings are provided therein, an impurity-doped silicide film is applied, and then the silicide film is provided with submicron-wide openings by means of the peripheral etching technique. CONSTITUTION:A thermal oxide film 3 is formed on an N type epitaxial layer 2 covering a P type Si substrate 1. An Si nitride film 4 is further formed on it, to be provided with an opening 5. Next, a P-doped Mo silicide film 6 is formed whereto a photoresist film 7 is applied. Exposure to light and development are effected with an end of the photoresist film 7 located at a placed whereat a gate is to be built. A method follows wherein reactive ion etching is performed for the formation, in the silicide layer 6 near the edge of the resist film 7, of an opening pattern 8 with its narrower than 1mum and wider than 0.2-0.3mum. The resist film 7 is removed, the surface is subjected to thermal oxidation for the formation of an oxide film 9, the nitride film 4 and oxide film 3 within the opening 8 are removed by etching, and, finally, a Schottky contact 12, gate electrode 11 are formed. |
