发明名称 Light energy conversion system
摘要 First and second semiconductor photoelectric conversion structures, each having a PIN junction, are assembled as a unitary structure with a redox reaction chamber. Heavily doped N and P type semiconductor layers of the first and second semiconductor photoelectric conversion layers, respectively, are held in contact with first and second aqueous solutions contained in first and second cells of the redox reaction chamber. By interconnecting first and second electrodes connected to the P and N type semiconductor layers, respectively, of the first and second semiconductor photoelectric conversion structures, H2 and O2 gases are released from the first and second cells, respectively. Alternatively, electrical leads may be connected to the above N and P layers whereby the unitary structure may be employed as a source of electrical energy.
申请公布号 US4525436(A) 申请公布日期 1985.06.25
申请号 US19830479560 申请日期 1983.03.28
申请人 SEMICONDUCTOR ENERGY LABORATORY CO., LTD. 发明人 YAMAZAKI, SHUNPEI
分类号 H01G9/20;H01L31/04;H01M14/00;(IPC1-7):H01M6/36 主分类号 H01G9/20
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