| 摘要 |
PURPOSE:To enable to verify the proper correction of a proximity effect and the possibility of the resolution of an exposure pattern under the conditions of some exposure previously and simply by comparing a presence within a set range of energy strength and evaluating the exposure data of electron beams. CONSTITUTION:Design pattern data are read from a memory 2, data are corrected and arithmetically operated on the basis of a previously determined correction method in a correction arithmetic circuit 3, and the quantities of correction to size and dosage are calculated. Design patterns in solid lines are corrected by using the quantities of correction, and irradiation patterns in broken lines are obtained. Since data are not always corrected properly extending over the whole regions according to the conditions of patterns, a plurality of sample points a1- a15 are set on each side of the design patterns, and energy strength is calculated. Positions where correction patterns are not resolved are extracted by comparing energy strength at several sample points with development energy strength. Extracted pattern data are stored in a buffer memory 6. |
