发明名称 PATTERN FORMING METHOD
摘要 PURPOSE:To substantially improve productivity by a method wherein a post-baking is performed at the temperature at which a photoresist film will not be completely hardened, thereby enabling to form the cross-sectional shape of the profile part of the lower layer aluminum pattern in gentle-sloped inclination by performing an etching for a short period. CONSTITUTION:A negative type photoresist film is coated on the aluminum film whereon an aluminum pattern to be used for a relatively thick bonding pad will be formed, an exposing and developing process is performed, and a post baking process to be performed prior to an etching is performed at the temperature necessary for hardening of the photoresist film or below that temperature, or a lower layer aluminum pattern 1a and an upper layer aluminum pattern 3a are formed without performing the post baking process. As a result, the cross-sectional shape of the profile part of the lower layer aluminum pattern 1a is formed in gentle-sloped inclination, and no disconnection in stepping part is generated on the upper aluminum pattern 3a to be used for wiring.
申请公布号 JPS60117648(A) 申请公布日期 1985.06.25
申请号 JP19830224187 申请日期 1983.11.30
申请人 HITACHI SEISAKUSHO KK 发明人 OGAWA SEIICHI
分类号 H01L21/60;H01L23/522 主分类号 H01L21/60
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