发明名称 LEAD FRAME FOR SEMICONDUCTOR DEVICE
摘要 PURPOSE:To obtain a frame, which does not use an expensive gold plated layer or a silver plated layer, and has sufficient soldering and bonding properties, by forming an electroless plated layer of a nickel and boron alloy on the surface. CONSTITUTION:An electroless plated layer of a nickel boron alloy is formed on the surface of a frame. The electroless plated layer of the nickel and boron layer can be formed on the entire surface of the lead frame, or the layer can be selectively formed only on a part, where excellent bonding property is required. For example, a ribbon shaped plate material comprising alloy 194 (Fe/Cu alloy) is blanked, and the shape as shown in the Figure is formed. Then, the electroless plating of the nickel and boron alloy is selectively applied to the hatched part, and the lead frame for a semiconductor device is obtained.
申请公布号 JPS60117761(A) 申请公布日期 1985.06.25
申请号 JP19830225761 申请日期 1983.11.30
申请人 TOSHIBA KK 发明人 UEDA YUUJI
分类号 H01L23/50;H01L23/495 主分类号 H01L23/50
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