| 摘要 |
PURPOSE:To improve the reliability of a semiconductor device by preventing the intrusion of a crystal defect in the end section of an island forming region formed to a semiconductor substrate when polysilicon in the island forming region is changed into a single crystal through annealing using energy beams such as laser. CONSTITUTION:Insulating layers 12 consisting of SiO2 are formed on a silicon substrate 11 through a thermal oxidation method. When silicon is grown on the whole surface through an epitaxial method, a single crystal layer 13a is grown on an exposed window 16 section in the substrate, but polysilicon 13b is applied on the insulating layers 12 composed of SiO2. Sections 17 as terminals on the scanning of laser beams in polysilicon 13b on the insulating layers 12 are removed through etching by a photolithography technique. Polysilicon 13b is changed into single crystals through laser annealing. Epitaxial layers 13 are turned into single crystal silicon layers 15 through laser annealing. When single crystal silicon around the insulating layers 12 is changed into SiO2 through a selective oxidation method lastly, single crystal islands, bottoms and peripheries thereof are isolated by SiO2, are formed on the insulating layers 12, and desired elements are shaped to islands. |
