| 摘要 |
PURPOSE:To enable the realization of desired characteristics by reducing the area and dimensions of elements by a method wherein a single crystal semiconductor region filling a recess formed in a substrate is formed and then made as one region for a semiconductor element. CONSTITUTION:An Si oxide film 28 is formed on the surface of the P type Si substrate 27, and this film is selectively etched by the use of a photo resist as a mask. Next, using the anisotropic dry etching method, the recess 29 is formed by selectively etching the substrate to a depth of approx. 3-4mum. Thereafter, an Si oxide film 30 is formed on the surface of the recess by using the vapor phase growing method and the like. Next, this oxide film is etched by the anisotropic dry etching method so that the bottom of the recess becomes exposed, and a high concentration layer 31 is formed by diffusing an N type impurity to the exposed surface. Then, an N type epitaxial layer 32 is selectively formed so as to fill the recess, and an Si oxide film 33 is formed over the entire surface. |
