| 摘要 |
PURPOSE:To solve the generation of an alloy-spike and the precipitation of silicon and the problem of a step coverage in a contact hole simultaneously by burying the contact hole with aluminum and flattening a wiring by using a plasma plating method. CONSTITUTION:A contact hole is formed, a barrier metal layer 3 is shaped on the surface of an insulating layer 2, etc., and an aluminum compound source is plasma-dissociated through DC glow discharge or high-frequency discharge and an Al thin-film is deposited on a semiconductor substrate 1. When a semiconductor substrate 7 is used as a cathode and a ground 6, etc. as an anode and voltage is applied between both poles at that time, a barrier layer 3a in the contact hole is also conducted, Al<+> easily exchanges charges, and deposition progresses. When aluminum is deposited in the contact hole as deposition progresses, currents also begin to flow through a barrier layer 3b on the insulating layer, the deposition of aluminum progresses at the same speed as the contact hole section, and a flattened aluminum wiring layer 4 is obtained. |
