| 摘要 |
PURPOSE:To enable the attainment of contact with a buried diffused layer on the surface of an element, by forming an island-shaped single conduction type single-crystal layer on an insulation layer, by forming an epitaxial layer thereon, by exposing the side of the epitaxial layer on the single-crystal layer, and by introducing impurities to form a contact diffused region. CONSTITUTION:After the formation of a structure in which a polysilicon film 13a is surrounded by an insulation film 12a, PbSG film 15 is formed thereon by coating. The polysilicon layer 13a is annealed to be of single crystal by using energy beams 16 and then made to be of an n<+> type by diffusing antimony therein. When an epitaxial layer 22 is made to grow after the PbSG film 15 is removed, subsequently, it turns into a polysilicon 17 on the insulation film 12a and an epitaxial layer 18 of single-crystal silicon on an n<+> type single-crystal layer 19. Then, after a mask 20 is formed, silicon etching is applied to remove the polysilicon 17, and a diffused layer 21 for contact is formed on the lateral side of the silicon epitaxial layer 18 by gas diffusion. The mask 20 is removed thereafter, polysilicon is made to grow on the whole surface, and oxidation is applied. Lastly, the surface is polished to be flat. |
