| 摘要 |
PURPOSE:To enable the high-speed formation of a thin film excellent in film characteristics on a substrate set in a reaction chamber, by introducing rays of light into the reaction chamber together with an ECR plasma flow so as to decompose a material gas. CONSTITUTION:A reaction chamber 1 and a plasma generating chamber 4 are evacuated, and a substrate 3 is heated by a heater. Next, valves 9 and 11 being opened, a disilane gas is introduced into the reaction chamber 1 and an Ar gas into the plasma generating chamber 4. A microwave is generated by turning a microwave generator on, and simultaneously an Ar gas plasma is generated by forming a magnetic field by means of a magnetic coil 7. Next, a mercury lamp 13 being lighted, ultraviolet rays are introduced into the reaction chamber 1. In the reaction chamber 1, disilane molecules are brought into photochemical reaction by the ultraviolet rays, so that part of them is decomposed. This decomposition is further facilitated through the reaction thereof to Ar ions, Ar radical molecules or the decomposition product thereof taken out of the plasma generating chamber 4, and these decomposition products are transferred onto the substrate 3 and deposited as an a-Si film thereon. |
