| 摘要 |
PURPOSE:To enable to apply a vapor-phase growing method to the manufacturing method of the titled semiconductor device, and also, to sufficiently heighten the barrier height of the heterojunction by a method wherein a multilayer semiconductor layer formed by enabling a GaAsP semiconductor thin film and a GaAs semiconductor thin film to alternately grow is provided on a GaAs semiconductor layer, whereon two-dimensional electron layers are formed. CONSTITUTION:Firstly, a non-doped GaAs semiconductor layer 2 is grown on a semiinsulative GaAs substrate 1 applying a vapor-phase growing method (even in the following crystal growth, the method shall be applied). A non-doped GaAs0.5 P0.5 semiconductor thin film 3 is grown on the GaAs semiconductor layer 2, which is to be used as a channel, and a non-doped GaAs semiconductor thin film 4 is grown thereon. Henceforth, a doped GaAs0.5P0.5 semiconductor thin film and a non-doped GaAs semiconductor thin film are alternately grown and laminated, and the laminated layer is provided as a semiconductor layer 5 on the GaAs semiconductor layer 2. After that, a source electrode 6, a drain electrode 7 and a gate electrode 8 are respectively formed. |
