发明名称 FORMATION OF RESIST FILM
摘要 PURPOSE:To form a good resist film through a dry process by irradiating a photosensitive or radiation-sensitive polymer compd. with laser beams to photochemically cut its main chain, and evaporating the obtained chemically active low small molecule. CONSTITUTION:A polymer having a photosensitive or radiation-sensitive functional groups and easily photodecomposable chemical bonds in the main chain, such as polymethyl methacrylate or ketone type polymers, are used for an org. target compd. A laser having an emission wavelengths of 190-400nm is used as the light source of irradiation light to be set in the range of 0.5-30J/cm<2> power density. In order to avoid deformation or chemical change of the target 8 due to heat generation of laser beam irradiation, the target is placed on a rotary stand and rotated. The formed with PMMA film perfectly retains its chemical structure, the dry process can be applied to the formation of the org. thin film, and resolution is enhanced as a resist because of a uniform and pinhole-free film.
申请公布号 JPS60117246(A) 申请公布日期 1985.06.24
申请号 JP19830224184 申请日期 1983.11.30
申请人 HITACHI SEISAKUSHO KK 发明人 AZUMA KAZUFUMI;TANAKA MASAHIRO;NATE KAZUO;NAKATANI MITSUO
分类号 G03C1/74;B05D3/06;B05D7/24;G03F7/16 主分类号 G03C1/74
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