| 摘要 |
In the production of imagewise structured resist layers, for example for the manufacture of printed circuits, electronic components, soldering masks, etc., by application, onto a substrate, of a positive-working resist layer (R) which can be rendered soluble by exposure to actinic light, imagewise exposure of the resist layer (R) to actinic light and removal of the exposed parts of the layer by washing out with a developer, the photosensitive resist layer (R) used, in particular in the form of a dry film resist, consists of two or more strata (S) which posses different basic solubilities, at least the upper stratum (U) being photosensitive and the lower stratum (LS) having a higher basic solubility in the developer than has the upper stratum (U). |
