| 摘要 |
PURPOSE:To enable forming a semiconductor single crystal thin film excellent in crystallinity and flatness on an insulation film, by making the rise of the temperature of the semiconductor film by beam annealing nearly equal on the insulation film and in an aperture portion by making the semiconductor film on the insulation film polycrystalline and the semiconductor film in the aperture portion amorphous. CONSTITUTION:An SiO2 film 12 is deposited on a single crystal Si substrate 11 of plane orientation (100), an aperture portion 13 is formed by lithography and a polycrystalline Si film 14 is deposited on all the surface using reduced pressure CVD. Then, masking with a resist leaving only the polycrystalline Si film 14 on the aperture portion 13 by the lithography again, an Si ion is implanted and the polycrystalline Si film 14 on the aperture portion 13 is selectively made amorphous and an amorphous Si film 15 is formed. If an electron beam 16 is irradiated and scanned removing the resist, the amorphous Si film 15 on the aperture portion 13 is melted and recrystallized to single crystal, then the polycrystalline Si film 14 on the SiO2 film 12 is made single crystal and a single crystal Si film 17 is grown and formed. |
