| 摘要 |
PURPOSE:To form a good-quality sputtered film having an uniform composition with one-gun system, and to automate the device by using a compd. obtained by melting different substances as a target in a sputtering method of a thin film of high-melting point silicide. CONSTITUTION:The fine powder of Mo and Si, for example, is uniformly mixed, and the mixture is melted by electron beam irradiation or a vacuum arc melting method to form a compd. of MoSi2 which is uniformly mixed and melted in forming a sputtered film of MoSi2. The compd. is used as a target 13, and a substrate to be treated such as a semiconductor wafer 19 is held by a holder 20 in a chamber 11. The chamber is evacuated to high vacuum from an air discharge port 22, and gaseous Ar is introduced from an introducing port 21 to regulate the chamber to specified vacuum. Then a negative high voltage is impressed to the target 13, and a high-density plasma is formed on the target by a magnet 15. A sputtered film having approximately the same composition as the target can be obtained on the wafer 19 by opening a shutter 18. |
